Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor Devices

Semiconductor Lasers: Device Physics and Applications

• Demonstration of an enhancement in the modulation bandwidth from 16 GHz to 28 GHz in an injection locked semiconductor laser with a coincident reduction in parasitic chirp. • Demonstration of room-temperature, continuous-wave operation of the first bipolar cascade laser. This laser demonstrated an internal efficiency of 150% and a measured external modulation efficiency of 99.3%. Continuous-w...

Physical Models for Semiconductor Device Simulation

Device simulation has two main purposes: to understand and to depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of the next device generation. Towards these goals, the quality of the implemented physical models is decisive, forcing heuristic t models to be replaced by \\rst-principle"-based models. Since transport schemes using moments o...

Tunneling Models for Semiconductor Device Simulation

Reliability physics study for semiconductor-polymer device development

We discuss several aspects of the reliability physics of silicon–polyaniline heterojunctions, such as degradation effects induced by local heating, charge trapping and temperature changes. The results further confirm the quality of the devices electrical characteristics and their suitability for radiation and gas sensors applications. q 2003 Elsevier Science Ltd. All rights reserved.

Chapter 4 . Semiconductor Lasers : Device Physics and Applications

Mathew C. Abraham, Professor Rajeev J. Ram There exists a substantial expertise in making extremely precise point-to-point current and potential difference measurements, however, at present there is no technique available to image the flow of currents in devices. Below we report on a preliminary investigation into using a magnetic force microscope (MFM) as a tool to render current contrast images.